PART |
Description |
Maker |
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
HYS64D32000EDL-6-D |
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
|
QIMONDA AG
|
V827332K04SATG-B1 |
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
MOSEL-VITELIC
|
K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66 256Mb H-die DDR SDRAM Specification
|
Atmel, Corp. SAMSUNG SEMICONDUCTOR CO. LTD.
|
IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
HYMP532S64CLP6-S6 HYMP532S64CLP6-S5 HYMP564S64CLP6 |
32M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
DU5162ETR-FAC DU5162ETR-E3C H5DU5182ETR-E3C |
32M X 16 DDR DRAM, 0.65 ns, PDSO66 32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
|